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IRF6665
Static @ T J = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
Conditions
V (BR)DSS
? V (BR)DSS / ? T J
R DS(on)
V GS(th)
I DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
100
–––
–––
3.0
–––
–––
0.12
53
–––
–––
–––
–––
62
5.0
20
V
V/°C
m ?
V
μA
V GS = 0V, I D = 250μA
Reference to 25°C, I D = 1mA
V GS = 10V, I D = 5.0A
V DS = V GS , I D = 250μA
V DS = 100V, V GS = 0V
–––
–––
250
V DS = 80V, V GS = 0V, T J = 125°C
I GSS
R G(int)
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
–––
–––
–––
–––
–––
1.9
100
-100
2.9
nA
?
V GS = 20V
V GS = -20V
Dynamic @ T J = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
Conditions
gfs
Q g
Q gs1
Q gs2
Q gd
Q godr
Q sw
t d(on)
t r
t d(off)
t f
C iss
C oss
C rss
C oss
C oss
C oss eff.
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q gs2 + Q gd )
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
6.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
8.4
2.2
0.64
2.8
2.8
3.4
7.4
2.8
14
4.3
530
110
29
510
67
130
–––
13
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
nC
ns
pF
V DS = 10V, I D = 5.0A
V DS = 50V
V GS = 10V
I D = 5.0A
See Fig.6 and 16
V DD = 50V
I D = 5.0A
R G = 6.0 ?
V GS = 10V
V GS = 0V
V DS = 25V
? = 1.0MHz
V GS = 0V, V DS = 1.0V, ? = 1.0MHz
V GS = 0V, V DS = 80V, ? = 1.0MHz
V GS = 0V, V DS = 0V to 80V
Avalanche Characteristics
Parameter
Typ.
Max.
Units
E AS
I AR
Single Pulse Avalanche Energy
Avalanche Current
–––
–––
11
5.0
mJ
A
Diode Characteristics
Parameter
Min.
Typ.
Max.
Units
Conditions
I S
Continuous Source Current
–––
–––
38
MOSFET symbol
D
(Body Diode)
A
showing the
I SM
Pulsed Source Current
–––
–––
34
integral reverse
G
(Body Diode)
p-n junction diode.
S
V SD
t rr
Q rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
31
37
1.3
–––
–––
V
ns
nC
T J = 25°C, I S = 5.0A, V GS = 0V
T J = 25°C, I F = 5.0A, V DD = 25V
di/dt = 100A/μs
Notes:
? Repetitive rating; pulse width limited by
max. junction temperature.
? Starting T J = 25°C, L = 0.89mH, R G = 25 ? , I AS = 5.0A.
? Surface mounted on 1 in. square Cu board.
? Pulse width ≤ 400μs; duty cycle ≤ 2%.
? C oss eff. is a fixed capacitance that gives the same
charging time as C oss while V DS is rising from 0 to 80% V DSS .
2
? Used double sided cooling , mounting pad.
? Mounted on minimum footprint full size board with
metalized back and with small clip heatsink.
? T C measured with thermal couple mounted to top
(Drain) of part.
? R θ is measured at T J of approximately 90°C.
? Based on testing done using a typical device & evaluation board
at Vbus=±45V, f SW =400KHz, and T A =25°C. The delta case
temperature ? T C is 55°C.
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